FERROELECTRIC MEMORY COMPANY
FMC is the provider of extremely efficient FeFET memory solutions for non-volatile storage. FeFET is ultra-low-power, high-performance, very dense, and extremely temperature stable. It will scale to transistor sizes ranging from 28nm to 5nm and below. The FMC team has been supported by “EXIST Forschungstransfer”, a program of the Federal Ministry for Economic Affairs and Energy. The company is based in Dresden, Germany.FMC commercializes a disruptive material innovation that will solve this ... problem for current and future technology nodes, i.e. eNVM based on ferroelectric hafnium oxide (FE-HfO2). The unexpected physical effect of ferroelectricity in HfO2 allows for the transformation of classical high-k metal-gate (HKMG) transistors into nonvolatile ferroelectric field effect transistors (FeFET). In this way, MCUs can easily be scaled from e.g. 65 nm down to 28 nm and beyond enabling tremendous advantages for the overall system: SoC cost reduction of around 80%, per bit write energy reduction by a factor of 1000 and an overall performance gain of the system of around 70% due to the transition to advanced process nodes. Due to the close relation of FeFET and CMOS baseline, there is no roadblock for FMC’s technology to be applied to cutting-edge technology nodes like 22 nm FDSOI, 1X nm FinFET and beyond.
FERROELECTRIC MEMORY COMPANY
Social Links:
Industry:
Hardware Information Technology Semiconductor
Founded:
2016-01-01
Address:
Dresden, Sachsen, Germany
Country:
Germany
Website Url:
http://www.ferroelectric-memory.com
Total Employee:
11+
Status:
Active
Contact:
+49 15201344014
Email Addresses:
[email protected]
Total Funding:
25.43 M USD
Technology used in webpage:
Viewport Meta IPhone / Mobile Compatible SPF SSL By Default LetsEncrypt Apple Mobile Web Clips Icon WordPress Font Awesome Domain Not Resolving Apache
Similar Organizations
Arista Networks
Arista Networks is a computer networking firm delivering cloud networking solutions for large data center and computer environments.
Ayar Labs
Ayar Labs develops an optical I/O solution for applications that require high bandwidth and low latency using light to move data.
Biren Technology
Biren Technology is a high-tech startup that has the niche in softwares, hardwares, and chip system.
Blu Wireless
Blu Wireless Technology is a silicon IP company developing wireless technology with a faster transmission rate.
MCube
mCube offers a complete portfolio of motion sensor hardware and software solutions for its clients.
No Isolation
We create tailored communication tools to put an end to loneliness.
Smarter Microelectronics
Smarter Microelectronics develops next-generation multi-band tunable power amplification (PA) modules.
Current Advisors List
Current Employees Featured
Founder
Investors List
SK Hynix
SK Hynix investment in Series B - Ferroelectric Memory Company
TEL Venture Capital
TEL Venture Capital investment in Series B - Ferroelectric Memory Company
eCapital
eCapital investment in Series B - Ferroelectric Memory Company
Robert Bosch Venture Capital
Robert Bosch Venture Capital investment in Series B - Ferroelectric Memory Company
imec.xpand
imec.xpand investment in Series B - Ferroelectric Memory Company
M Ventures
M Ventures investment in Series B - Ferroelectric Memory Company
EASME - EU Executive Agency for SMEs
EASME - EU Executive Agency for SMEs investment in Grant - Ferroelectric Memory Company
eCAPITAL ENTREPRENEURIAL PARTNERS
eCAPITAL ENTREPRENEURIAL PARTNERS investment in Series A - Ferroelectric Memory Company
High-Tech Grunderfonds
High-Tech Grunderfonds investment in Seed Round - Ferroelectric Memory Company
Newest Events participated
Official Site Inspections
http://www.ferroelectric-memory.com
- Host name: 131.189.220.10
- IP address: 131.189.220.10
- Location: United States
- Latitude: 37.751
- Longitude: -97.822
- Timezone: America/Chicago

More informations about "Ferroelectric Memory Company"
Ferroelectric Memory Company - Crunchbase
Ferroelectric Memory Company solves one of the most important hardware challenges in the age of Internet-of-Things.See details»
Ferroelectric RAM - Wikipedia
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric materialSee details»
Ferroelectric Memory GmbH (FMC) Raises $20 Million to …
DRESDEN, Germany, Nov. 17, 2020 /PRNewswire/ -- Ferroelectric Memory GmbH (FMC), the ferroelectric hafnium oxide technology leader, today announced that it has completed a $20 …See details»
Ferroelectric Memory Research Group at the University of Toronto
This page is designed to provide you with the most recent information on Ferroelectric Memory Research Group (FMRG) in the Department of Electrical and Computer Engineering at the …See details»
Ferroelectric Memory Company (Ferroelectric Memory …
Efficient storage media made of ferroelectric hafnium oxide.See details»
Technology – Ferroelectric Memory Company
The ferroelectric effect in hafnium oxide was an unexpected discovery, prompting extensive research to prove its potential as a memory material. The results of this research are shown in …See details»
The Past, the Present, and the Future of Ferroelectric Memories
Mar 11, 2020 This article will describe the history of ferroelectric memories and its current status both with respect to the commercialization of ferroelectric memories based on traditional …See details»
Ferroelectric Memory Devices: Pioneering In-Memory and …
Nov 26, 2024 We will discuss various non-volatile, particularly ferroelectric memory concepts to demonstrate this concept and show first realizations of ferroelectric field effect transistor …See details»
Inside story of ferroelectric memories - Nature
Mar 14, 2012 The drive to improve digital memory through ever-shrinking electronic circuitry will ultimately face a bottleneck. Researchers propose exploiting the room 'inside' memory …See details»
Ferroelectric Memory Company - Crunchbase
Ferroelectric Memory Company solves one of the most important hardware challenges in the age of Internet-of-Things.See details»
Multiple Vectors Tackle Memory Bandwidth - Semiconductor Digest
Mar 18, 2025 Also, ferroelectric devices are non-volatile, fast, and can be integrated in the metal layers of CMOS transistors. At an evening imec forum, (ITF@IEDM), Jan Van Houdt, an imec …See details»
Ferroelectric Memory Company - Contacts, Employees, Board …
Ferroelectric Memory Company solves one of the most important hardware challenges in the age of Internet-of-Things.See details»
Innovative Ferroelectric Material Could Enable Next-Generation …
Jun 22, 2022 The Science Ferroelectric materials are substances with spontaneous electrical polarization. Polarization refers to the separation of the negative and positive charges within a …See details»
SunRise Memory - Crunchbase Company Profile & Funding
SunRise Memory specializes in the development and production of 3D Ferroelectric RAM, a type of non-volatile memory technology. This innovation is designed to meet the needs of memory …See details»
Ferroelectric FET Memory | part of Emerging ... - IEEE Xplore
Summary <p>Ferroelectric materials have been utilized in commercial memories, for example, ferroelectric random access memory (FRAM), where a transistor‐accessed …See details»
Demonstration of Ferroelectric FET Memory with Oxide …
Here we experimentally demonstrate a smallest cell area of 0.009 μm 2 in ferroelectric (FE) FET memory device with oxide semiconductor (OS) channel (OS-FeFET) and achieve high read …See details»
Ferroelectric Transistors for Memory and Neuromorphic Device ...
Dec 9, 2022 Additionally, hafnia-based ferroelectrics show high scalability and large coercive fields that are advantageous for high-density memory devices. This review summarizes the …See details»
(PDF) Ferroelectric memory - ResearchGate
May 1, 2012 PDF | The current status of developments in the field of ferroelectric memory devices has been considered. The rapidly growing market of non-volatile... | Find, read and …See details»
Ferroelectric Compute-in-Memory Framework for Solving Pure …
Mar 18, 2025 In this work, we propose C-Nash, a novel ferroelectric compute-in-memory (CiM) framework capable of efficiently addressing both pure and mixed strategy NE solutions.See details»
(PDF) Ferroelectric Memories - ResearchGate
Jan 1, 1990 These ferroelectric random-access memories are expected to replace magnetic core memory, magnetic bubble memory systems, and electrically erasable read-only memory …See details»