V-MEMORY

v-memory-logo

V-Memory is a technology company that provides semiconductor manufacturing solutions.

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V-MEMORY

Industry:
Electronics Manufacturing Semiconductor Technical Support

Founded:
2018-01-01

Address:
Giheung, Kyonggi-do, South Korea

Country:
South Korea

Website Url:
http://www.vmemory.net

Status:
Active

Contact:
+82 31 8065 4774

Technology used in webpage:
South Korean Server Location


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Investors List

actnerlab_image

ActnerLab

ActnerLab investment in Seed Round - V-Memory

actnerlab_image

ActnerLab

ActnerLab investment in Seed Round - V-Memory

university-of-ulsan_image

University of Ulsan

University of Ulsan investment in Seed Round - V-Memory

actnerlab_image

ActnerLab

ActnerLab investment in Seed Round - V-Memory

Official Site Inspections

http://www.vmemory.net

  • Host name: 203.245.44.32
  • IP address: 203.245.44.32
  • Location: South Korea
  • Latitude: 37.5112
  • Longitude: 126.9741
  • Timezone: Asia/Seoul

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More informations about "V-Memory"

CONTACT - V-memory

V-memory Design Lab: ICS 42, Changeop-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea ,Room 128, Lab-03. R&D Lab : Kyunghee University Global Campus Lab A – 109 E. …See details»

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Where is V-Memory 's headquarters? V-Memory is located in Giheung, Kyonggi-do, South Korea. Who invested in V-Memory? V-Memory has 2 investors including ActnerLab and ActnerLab. …See details»

PRODUCT - V-memory

V-memory leads the future of the 4th Industrial Revolution such as Supercomputer, 5G, Autonomous Driving, and Big Data. V-memory is a new memory technology that can operate …See details»

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V MEMORY

V-memory Design Lab: ICS 42, Changeop-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea ,Room 128, Lab-03. R&D Lab : Kyunghee University Global Campus Lab A – 109 E. …See details»

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Support | @Memory.NET

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Systems - Memory.NET

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IR - V-memory

V-memory Design Lab: ICS 42, Changeop-ro, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea ,Room 128, Lab-03. R&D Lab : Kyunghee University Global Campus Lab A – 109 E. …See details»

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